A method for doping of an active hall - effect - area of a hall effect device - - - - and hall effect device comprising a doped active hall - effect - field

摘要

A method for doping of an active hall - effect - area of a hall - effect - device in a semiconductor substrate, the formation of a first doping profile of a first dopant type in a first low field of the active hall - effect - area by means of a first implantation with a first implantation energy level, the formation of a second doping profile of the first dopant type in a second low field of the active region by means of a second implantation with a second implantation energy level, and the formation of a total - doping profile of the active hall - effect - area by tempering of the semiconductor substrate with the active hall - effect - area, which the first and the second doping profile has.