A three-point-probe method for measuring resistivity and the Hall coefficient using Hall devices with minimal design complexity

摘要

A novel empirical method for express measurement of resistivity and the Hall coefficient, i.e. the sign, the concentration and the bulk mobility of the majority carriers in semiconductor (silicon) wafers is presented and tested. This approach is based on the parallel-field Hall devices with minimal design complexity containing only three contacts-two input and one (Hall) output. The unique simplicity of this three-point-probe method, the lack of numerical coefficients' calculation and particular requirements for the geometrical dimensions, probe spacing, wafer form, etc. allows to obtain the necessary information following experimentally clear and technically reproducible steps. The data obtained from non-structured n- and p-type silicon wafers at carrier's concentration of 10~(15) <= n; p <= 10~(16) cm~(-3) by appropriate probe arrangements corroborate very well with the results from wafers' certificates and the results obtained using common measurement techniques. The error does not exceed 5-6percent which is about the same as the accuracy of other approaches used for this purpose. The results are especially promising in IC fabrication and complementing the classical Van der Pauw method.