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Method for producing microelectromechanical structures in a layer sequence and a corresponding electronic component having a microelectromechanical structure

机译:用于制造层序列的微机电结构的方法以及具有微机电结构的相应电子部件

摘要

The invention provides a method for producing microelectromechanical structures (ME1) in a layer sequence and a corresponding electronic component having a microelectromechanical structure. The method comprises providing a carrier substrate (T1) having a first surface (10), applying an insulating layer (I1) to the first surface (10), epitaxially growing a first silicon layer (S1) onto the insulating layer (I1) Patterning the first silicon layer (S1) to form trenches (G) in the first silicon layer (S1), passivating the first silicon layer (S1), filling the trenches (G) and facing away from one of the first surface (10) Side a Passiervierungsschicht (P) forms, structuring of the passivation layer (P), wherein in the first silicon layer (S1) sacrificial areas (O1) and functional areas (F1) form, and the sacrificial areas (O1) on one of the support substrate (T1) facing away Are at least locally free of the passivation layer (P) and finally removing the sacrificial regions (O1).
机译:本发明提供了一种用于以层顺序制造微机电结构(ME1)的方法以及具有微机电结构的相应电子部件。该方法包括提供具有第一表面(10)的载体衬底(T1),在第一表面(10)上施加绝缘层(I1),在绝缘层(I1)上外延生长第一硅层(S1)。第一硅层(S1)在第一硅层(S1)中形成沟槽(G),钝化第一硅层(S1),填充沟槽(G)并背离第一表面(10)中的一个形成钝化层(P)的Passiervierungsschicht(P),其中在第一硅层(S1)中形成牺牲区(O1)和功能区(F1),并在其中一个支撑物上形成牺牲区(O1)背对的衬底(T1)至少局部没有钝化层(P),最后去除了牺牲区域(O1)。

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