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首页> 外文期刊>Microelectronic Engineering >Improvement of adhesion and interfacial diffusion behavior in Cu/glass structures using OsO_x layers for microelectromechanical systems
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Improvement of adhesion and interfacial diffusion behavior in Cu/glass structures using OsO_x layers for microelectromechanical systems

机译:使用OsO_x层改善微机电系统在Cu /玻璃结构中的附着力和界面扩散行为

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摘要

We demonstrated that a Cu/Ni/OsO_x/glass structure fabricated by using supercritical fluid chemical deposition has high adhesion strength. The adhesion strength was determined with a scratch tester, and the films and interfaces were characterized by transmission electron microscopy. Ni deposition resulted in the reduction of the pre-deposited OsO_2 layer, and an OsO_x layer formed again during the subsequent post-Ni-deposition annealing. We observed an extreme adhesion improvement. The high adhesion strength originated from the presence or re-formation of the OsO_x layer and the diffusion of Cu, Ni, and Si into the OsO_x layer.
机译:我们证明了通过使用超临界流体化学沉积制造的Cu / Ni / OsO_x /玻璃结构具有很高的粘合强度。用划痕测试仪测定粘合强度,并用透射电子显微镜表征膜和界面。镍沉积导致预先沉积的OsO_2层减少,在随后的镍沉积后退火过程中再次形成OsO_x层。我们观察到了极大的粘合力改善。高粘附强度源自OsO_x层的存在或重新形成以及Cu,Ni和Si扩散到OsO_x层中。

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