METHOD FOR ION BEAM TREATMENT OF MONO GAS AND MULTILOADS TO PRODUCE SYNTHETIC SAPPHIRE ANTIREFLECTION MATERIALS

摘要

A process for ion-beam treatment of a single and multicharged gas produced by an electron cyclotron resonance (ECR) source of a synthetic sapphire material where - the ion acceleration voltage between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; the ion dose per unit area is chosen in a range of between 10 12 ions / cm 2 and 10 18 ions / cm 2 so as to create an ionic concentration equal to 10% with an uncertainty of (+/-) 5% . Advantageously, synthetic antireflective sapphire materials are obtained in the visible range.