Method of treatment with an ion beam of a gas, mono- and multicharge to produce materials made of sapphire synthetic antireflection

摘要

Method of treatment with an ion beam of a gas, mono- and multicharged produced by a source to electron cyclotron resonance (ecr) of a material, synthetic sapphire, where - the acceleration voltage of the ions comprised between 5 kv and 1000 kv is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; - one chooses the quantity of ions per unit surface area in a range comprised between 1012 ions / cm2 and 1018 ions / cm2, so as to create an atomic concentration of ions equal to 10% with an uncertainty of (+ / -) 5%. It is thus obtained, advantageously of the materials, synthetic sapphire an antireflection coating in the visible range.