GaN semiconductor substrate and semiconductor device manufactured by epitaxial growth on the GaN semiconductor substrate

摘要

A semiconductor substrate encompasses a GaN substrate (11) and a single-crystal layer (12) formed of III-V nitride compound semiconductor expitaxially grown on the GaN substrate. The GaN substrate (11) has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards 1-100 direction lying in a range of 0. 12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards 11-20 direction lying in a range of 0.00 degree to 0.06 degree.