A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed thereon, an active layer formed on the lower reflecting mirror, a selective oxidization layer including a current confined structure, and an upper reflecting mirror. A mesa structure is formed in at least the active layer, selective oxidization layer, and the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between an upper electrode and a lower electrode. The semiconductor substrate is inclined with respect to (100) plane, and the active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate.
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