An antifuse may include a non-planar conductive terminal having a high-z portion extending to a greater z-height than a low-z portion. A second conductive terminal is disposed over the low-z portion and separated from the first terminal by at least one intervening dielectric material. Fabrication of an antifuse may include forming a first opening in a first dielectric material disposed over a substrate, and undercutting a region of the first dielectric material. The undercut region of the first dielectric material is lined with a second dielectric material, such as gate dielectric material, through the first opening. A conductive first terminal material backfills the lined undercut region through the first opening. A second opening through the first dielectric material exposes the second dielectric material lining the undercut region. A conductive second terminal material is backfilled in the second opening.
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