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METHODS FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ATOMIC LAYER STRUCTURES USING N2O AS AN OXYGEN SOURCE
METHODS FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ATOMIC LAYER STRUCTURES USING N2O AS AN OXYGEN SOURCE
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机译:使用N2O作为氧源制造包括原子层结构的半导体器件的方法
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摘要
A method for making a semiconductor device may include forming a plurality of spaced apart structures on a semiconductor substrate within a semiconductor processing chamber, with each structure including a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base semiconductor portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Furthermore, the oxygen monolayers may be formed using N2O as an oxygen source.
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