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A METHOD FOR PRODUCING MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE, PREPARED WITH THIS METHOD
A METHOD FOR PRODUCING MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE, PREPARED WITH THIS METHOD
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机译:该方法制备的一种生产含硝酸一氧化镓的方法及一种含硝酸一氧化镓的方法
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摘要
The present invention relates to a method for producing monocrystalline gallium containing nitride from a source material containing gallium in the environment of supercritical ammonia solvent with the addition of a mineralizer containing the element of Group I (IUPAC, 1989), wherein in an autoclave two temperature zones are generated, i.e. a dissolution zone with lower temperature containing the source material, and a crystallization zone located below it with higher temperature, containing at least one seed. At least two further components are introduced into the process environment, namely an oxygen getter in molar ratio to ammonia ranging from 0.0001 to 0.2, and an acceptor dopant in molar ratio to ammonia not higher than 0.1, said acceptor dopant being manganese, iron, vanadium or carbon, or a combination thereof. The invention also relates to a monocrystalline gallium containing nitride prepared by this method.
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