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POLYCRYSTAL CERAMIC SUBSTRATE, POLYCRYSTAL CERAMIC SUBSTRATE WITH JOINT LAYER AND LAMINATE SUBSTRATE

机译:多晶陶瓷基体,带连接层和层状基体的多晶陶瓷基体

摘要

PROBLEM TO BE SOLVED: To provide a polycrystal ceramic substrate suitable as a ground substrate of a laminate substrate capable of suppressing reduction of manufacturing efficiency of a semiconductor device due to deterioration of a joint state, a polycrystal ceramic substrate with a joint layer containing the polycrystal ceramic substrate and a laminate substrate.SOLUTION: There is provided a polycrystal ceramic substrate 10 jointed to a compound semiconductor substrate 30 via a joint layer 20, and satisfying at least one of Relational expression (1) 0.7α/α0.9 (1) and Relational expression (2) 0.7α/α0.9 (2), where αis linear expansion coefficient of the polycrystal ceramic substrate 10 and αis linear expansion coefficient of the compound semiconductor substrate 30, at 30°C to 300°C, αis linear expansion coefficient of the polycrystal ceramic substrate 10 and αis linear expansion coefficient of the compound semiconductor substrate 30, at 30°C to 1000°C.SELECTED DRAWING: Figure 1
机译:解决问题的方法:提供一种多晶陶瓷基板,该多晶陶瓷基板适合作为层压基板的接地基板,该层压基板的接地基板能够抑制由于接合状态的劣化而导致的半导体装置的制造效率的降低。解决方案:提供一种多晶陶瓷基板10,该多晶陶瓷基板10通过接合层20接合至化合物半导体基板30,并且满足关系表达式(1)0.7 <α/α<0.9(1 )和关系表达式(2)0.7 <α/α<0.9(2),其中α是多晶陶瓷衬底10的线性膨胀系数,而α是化合物半导体衬底30在30°C至300°C时的线性膨胀系数, α是多晶陶瓷衬底10的线性膨胀系数,而α是化合物半导体衬底30在30℃至1000℃的线性膨胀系数。

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