DEEP UV LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING DEEP UV LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for lowering an operation voltage of a deep UV light-emitting device having a vertical structure.SOLUTION: A deep UV light-emitting device 10 comprises: an electronic block layer 22 of a p-type AlGaN-based semiconductor material or p-type AlN-based semiconductor material, provided on a support substrate 32; an active layer 20 of an AlGaN-based semiconductor material, provided on the electronic block layer 22; an n-type clad layer 18 of an n-type AlGaN-based semiconductor material provided on the active layer 20; an n-type contact layer 34 of an n-type semiconductor material including a gallium nitride (GaN), provided on a partial region on the n-type clad layer 18; and an n-side electrode 36 formed on the n-type contact layer 34. The n-type contact layer 34 is smaller than the n-type clad layer 18 in band gap.SELECTED DRAWING: Figure 1