A gas supply delivery arrangement for supplying a process gas to a chamber of a plasma processing system in which a semiconductor substrate is processed by a gas introduced through at least first, second, and third gas injection zones. A plurality of process gas supply inlets and a plurality of conditioning gas inlets. A plurality of gas supply sticks each adapted to provide fluid communication with a respective process gas supply and a plurality of gas supply sticks each adapted to provide fluid communication with a respective regulated gas supply. Including an adjustable gas stick. The first gas outlet is adapted to deliver gas to the first gas injection zone, the second gas outlet is adapted to deliver gas to the second gas injection zone, and the third gas The outlet is adapted to deliver gas to the third gas injection zone. A gas separator is in fluid communication with the mixing manifold and supplies a mixed gas exiting the mixing manifold to a first mixed gas that can be supplied to a first gas outlet and to a second and / or third gas outlet A first valve arrangement that separates into a possible second gas mixture. [Selection] Figure 3
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