NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SEMICONDUCTOR LAMINATE, METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of manufacturing a semiconductor device with high quality and easily, comprising a heat dissipation substrate.;SOLUTION: A nitride semiconductor template comprises: a heat dissipation substrate having heat conductivity equal to or higher than 6 W/(cm K) in 300 K; a first warpage suppression layer which is provided at a first principal surface side of the heat dissipation substrate and consists of a nitride semiconductor; a second warpage suppression layer which is provided at a second principal surface side of the heat dissipation substrate opposite to a first principal surface and consists of the same material as the first warpage suppression layer; and a growth underground layer which is provided on the first warpage suppression layer and consists of a monocrystalline nitride semiconductor.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2018,JPO&INPIT