METHOD FOR MANUFACTURING SILICON CARBIDE SINTERED BODY RAW MATERIAL, SILICON CARBIDE SINTERED BODY RAW MATERIAL AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide sintered body raw material having a large surface area exposed to a growth space and capable of efficiently discharging a raw material sublimation gas.SOLUTION: The method for manufacturing a silicon carbide sintered body raw material used for manufacturing a silicon carbide single crystal obtained by arranging a seed crystal and a raw material in a vessel and sublimating the raw material to grow the silicon carbide single crystal on the seed crystal comprises: loading a silicon carbide raw material powder in the lower portion of the vessel; arranging a passage formation material to be melted, evaporated or sublimated at a temperature equal to or more than the sintering temperature of the silicon carbide raw material powder and lower than the sublimation temperature of silicon carbide so as to be extended downward the silicon carbide raw material powder from the loading surface; heating the passage formation material at a temperature lower than the sublimation temperature of silicon carbide to melt, evaporate or sublimate it; and obtaining the silicon carbide raw material sintered body having a gas passage formed by removing the passage formation material.SELECTED DRAWING: Figure 2