Techniques for filling high aspect ratio elongated structures having multiple metal layers and related configurations

摘要

Embodiments of the present disclosure describe techniques for filling high aspect ratio elongated structures having multiple metal layers and related configurations. In one embodiment, an apparatus is a dielectric material having a transistor structure comprising a semiconductor material and a recess defined on the transistor structure, the recess having a height in a first direction; An electrode terminal disposed and coupled to the transistor structure, wherein the first portion of the electrode terminal includes a first metal that is in direct contact with the transistor structure, and the second portion of the electrode terminal is the first portion. An interface between the first portion and the second portion, wherein the interface is planar and is recessed in a second direction that is substantially perpendicular to the first direction. An electrode terminal extending over. Other embodiments may be described and / or claimed.