Dislocation density reduction method of the production method and iii nitride substrate Iii Nitride Substrate

摘要

PROBLEM TO BE SOLVED: To provide a method for obtaining easily and surely a group III nitride substrate having a low dislocation density.;SOLUTION: A production method of a group III nitride substrate includes: an annealing step for forming irregularities on the surface 1a of a ground substrate, by annealing the ground substrate 1 whose surface is flat under a high-temperature reduction atmosphere (for example, an atmosphere containing hydrogen gas at 900°C-1,150°C as a main component); and a formation step for forming a group III nitride layer 2, for example, by a flux method on the ground substrate 1 after the annealing step.;COPYRIGHT: (C)2015,JPO&INPIT