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Method for manufacturing III-nitride substrate and method for reducing dislocation density of III-nitride substrate
Method for manufacturing III-nitride substrate and method for reducing dislocation density of III-nitride substrate
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机译:III族氮化物衬底的制造方法和降低III族氮化物衬底的位错密度的方法
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摘要
PROBLEM TO BE SOLVED: To provide a method for obtaining easily and surely a group III nitride substrate having a low dislocation density.SOLUTION: A production method of a group III nitride substrate includes: an etching step for forming a recessed part on the surface of a ground substrate so that a C-surface ratio becomes 20% or higher and 90% or lower, by applying chlorine plasma etching to the surface of the ground substrate whose surface is the flat C-surface in the state where a bias voltage is not applied to the ground substrate; and a formation step for forming a group III nitride layer on the ground substrate after the etching step.
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