首页> 外国专利> Method for forming organic semiconductor layer and base material with supporting member including organic semiconductor layer disposed on base

Method for forming organic semiconductor layer and base material with supporting member including organic semiconductor layer disposed on base

机译:具有包括设置在基底上的有机半导体层的支撑构件的有机半导体层和基底材料的形成方法

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an organic semiconductor layer capable of preventing dirt from adhering to a surface of the organic semiconductor layer or preventing the surface from being damaged.SOLUTION: A method for forming an organic semiconductor layer 25 comprises the steps of: supplying a base material 22; arranging a plurality of support members 26 on an upper surface 22a or a lower surface 22b of the base material 22; forming a plurality of organic semiconductor layers 25 including an organic semiconductor material in order on the upper surface 22a of the base material 22; and winding the base material 22 in which the semiconductor layer 25 is formed. The support member 26 is thicker than the organic semiconductor layer 25. In the support member arrangement step, the support members 26 are arranged so that at least one of the support members 26 is allocated to one of the organic semiconductor layers 25.
机译:解决的问题:提供一种形成有机半导体层的方法,该方法能够防止污垢粘附到有机半导体层的表面或防止该表面被损坏。解决方案:一种形成有机半导体层25的方法包括:步骤:提供基材22;在基材22的上表面22a或下表面22b上配置多个支撑部件26。在基材22的上表面22a上依次形成包含有机半导体材料的多个有机半导体层25。卷绕形成有半导体层25的基材22。支撑构件26比有机半导体层25厚。在支撑构件布置步骤中,布置支撑构件26,使得支撑构件26中的至少一个被分配给有机半导体层25之一。

著录项

  • 公开/公告号JP6179068B2

    专利类型

  • 公开/公告日2017-08-16

    原文格式PDF

  • 申请/专利权人 大日本印刷株式会社;

    申请/专利号JP20120080215

  • 发明设计人 坂 田 麻紀子;武 田 利 彦;

    申请日2012-03-30

  • 分类号H01L51/40;H01L51/05;H01L29/786;H01L21/336;H01L51/48;

  • 国家 JP

  • 入库时间 2022-08-21 13:57:00

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