Method for manufacturing silicon carbide semiconductor device, method for managing manufacturing process of silicon carbide semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device capable of achieving stable quality and improved yield of the silicon carbide semiconductor device by highly accurately managing temperatures, and a method for managing a manufacturing step of the silicon carbide semiconductor device.SOLUTION: A method for manufacturing a silicon carbide semiconductor device comprises the steps of: (a) preparing a silicon carbide base; (b)forming a carbon protective film 20 on the base; (c) performing thermal treatment for the base and the carbon protective film; and (d) measuring a temperature on the base by analyzing the carbon protective film by Raman spectroscopy after the step (c).