首页> 外国专利> Method for measuring gas introduction hole provided in electrode for plasma etching apparatus, electrode, method for regenerating electrode, plasma etching apparatus, method for displaying state distribution diagram of gas introduction hole

Method for measuring gas introduction hole provided in electrode for plasma etching apparatus, electrode, method for regenerating electrode, plasma etching apparatus, method for displaying state distribution diagram of gas introduction hole

机译:等离子体蚀刻装置的电极所具备的气体导入孔的测定方法,电极,电极的再生方法,等离子体蚀刻装置,气体导入孔的状态分布图的显示方法

摘要

The present disclosure is to provide a measuring method which can measure a gas introduction hole provided in an electrode for a plasma etching device with high accuracy, and to provide an electrode having a highly accurate gas introduction hole. The measuring method of the gas introduction hole provided in the electrode for the plasma etching device according to the present disclosure is a method for measuring the gas introduction hole provided so as to penetrate the substrate of the electrode for the plasma etching device in the thickness direction, including a step of irradiating light from one surface side of the substrate toward the gas introduction hole; a step of obtaining a two-dimensional image of the light transmitted to the other surface side of the substrate via the gas introduction hole; and a step of measuring at least one of the diameter, the inner wall surface roughness and the degree of perpendicularity of the gas introduction hole based on the two-dimensional image.
机译:本发明提供一种测量方法,其可以高精度地测量设置在用于等离子体蚀刻装置的电极中的气体引入孔,并且提供一种具有高精度的气体引入孔的电极。根据本公开的设置在用于等离子体蚀刻装置的电极中的气体引入孔的测量方法是一种用于测量设置成在厚度方向上穿透用于等离子体蚀刻装置的电极的基板的气体引入孔的方法。包括从基板的一个表面侧朝向气体导入孔照射光的步骤;获得经由气体导入孔透射到基板的另一表面侧的光的二维图像的步骤;根据二维图像,测量气体引入孔的直径,内壁表面粗糙度和垂直度中的至少一个。

著录项

  • 公开/公告号JP6135965B2

    专利类型

  • 公开/公告日2017-05-31

    原文格式PDF

  • 申请/专利权人 エーサット株式会社;

    申请/专利号JP20160550830

  • 发明设计人 鈴木 崇之;

    申请日2015-12-25

  • 分类号H01L21/3065;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 13:55:27

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