首页> 外国专利> METHOD OF MEASURING GAS INTRODUCING HOLE PROVIDED IN ELECTRODE FOR PLASMA ETCHING DEVICE ELECTRODE ELECTRODE REGENERATION METHOD REGENERATED ELECTRODE PLASMA ETCHING DEVICE AND GAS INTRODUCING HOLE STATE DISTRIBUTION DIAGRAM AND DISPLAY METHOD FOR SAME

METHOD OF MEASURING GAS INTRODUCING HOLE PROVIDED IN ELECTRODE FOR PLASMA ETCHING DEVICE ELECTRODE ELECTRODE REGENERATION METHOD REGENERATED ELECTRODE PLASMA ETCHING DEVICE AND GAS INTRODUCING HOLE STATE DISTRIBUTION DIAGRAM AND DISPLAY METHOD FOR SAME

机译:等离子体刻蚀装置的电极引入气体的测量方法电极再生方法电极植入等离子体的装置和气体引入孔隙状态分布图的气体的显示方法

摘要

A method of measuring a gas introduction hole provided in an electrode for a plasma etching apparatus with high accuracy and an electrode provided with a gas introduction hole with high precision. A method for measuring a gas introduction hole provided in an electrode for a plasma etching apparatus according to the present invention is a method for measuring a gas introduction hole provided in an electrode for a plasma etching apparatus so as to penetrate the substrate in the thickness direction, A step of obtaining a two-dimensional image of light transmitted through the gas introduction hole to the other surface side of the substrate, and a step of calculating a diameter of the gas introduction hole, a roughness of the inner wall surface, And a step of measuring at least one of a vertical degree and a vertical degree.
机译:一种高精度地测量设置在用于等离子体蚀刻装置的电极中的气体引入孔的方法以及具有高精度的设置有气体引入孔的电极的方法。根据本发明的用于测量设置在等离子蚀刻装置的电极中的气体引入孔的方法是一种用于测量设置在等离子蚀刻装置的电极中以在厚度方向上穿透基板的气体引入孔的方法。获得通过气体导入孔传输到基板的另一表面侧的光的二维图像的步骤,以及计算气体导入孔的直径,内壁表面的粗糙度和测量垂直度和垂直度中的至少一个的步骤。

著录项

  • 公开/公告号KR101988437B1

    专利类型

  • 公开/公告日2019-06-12

    原文格式PDF

  • 申请/专利权人 에이-삿토 가부시키가이샤;

    申请/专利号KR20167035309

  • 发明设计人 SUZUKI TAKAYUKI;

    申请日2015-12-25

  • 分类号H01L21/3065;H01J49/10;H01L21/67;H05H1/46;

  • 国家 KR

  • 入库时间 2022-08-21 11:48:25

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