Method for metallization of dielectric substrate surface and dielectric substrate with metal film

摘要

The surface of the dielectric substrate is treated with an atmospheric pressure plasma using a rare gas to generate a peroxide radical, and a functional group that coordinates with silver ions is fixed by reacting with a grafting agent, and the formula (1) A silver thin film layer is formed by applying a silver-containing composition containing 10 to 50% by mass of the silver compound (A) and 50 to 90% by mass of the amine compound (B) of the formula (2), and heating and curing the composition. Thus, a metal film having high adhesion can be formed on the surface of a fluororesin which is suitable as a dielectric substrate without delay in signal propagation speed and increase in power consumption. (R1; hydrogen,-(CY2) a-CH3 or-((CH2) b-O-CHZ) c-CH3, R2;-(CY2) d-CH3 or-((CH2) e-O -CHZ) f-CH3, Y: hydrogen atom or-(CH2) g-CH3, Z: hydrogen atom or-(CH2) h-CH3, a: an integer of 0-8, b: an integer of 1-4, c An integer of 1 to 3, d; an integer of 1 to 8, e; an integer of 1 to 4, f; an integer of 1 to 3, g; an integer of 1 to 3, h;