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Method of manufacturing a semiconductor quantum dots, single photon generator and a manufacturing method thereof

机译:半导体量子点的制造方法,单光子产生器及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor quantum dot, and a single photon generator and a method of manufacturing the same, capable of achieving both high light-emitting efficiency and position controllability of a semiconductor quantum dot.;SOLUTION: In a rectangular recessed part formed on a surface of a semiconductor substrate having a (100) plane as a principal surface, a lower clad layer having a recess consisting of an inclined plane whose angle made with the (100) plane is gentler than 54.7° is formed. A quantum dot layer is formed in this recess.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种制造半导体量子点的方法,以及一种单光子产生器及其制造方法,能够同时实现半导体量子点的高发光效率和位置可控性。在以(100)面为主面的半导体基板的表面上形成的矩形的凹部中,下包层具有由与(100)面的夹角小于54.7°的角度的倾斜面构成的凹部。形成了。在该凹槽中形成了量子点层。;版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP6031978B2

    专利类型

  • 公开/公告日2016-11-24

    原文格式PDF

  • 申请/专利权人 富士通株式会社;

    申请/专利号JP20120262770

  • 发明设计人 植竹 理人;

    申请日2012-11-30

  • 分类号H01S5/34;

  • 国家 JP

  • 入库时间 2022-08-21 13:53:18

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