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Alternatively the semiconductor substrate, method of setting the production method and the exposure conditions of the substitute semiconductor substrate

机译:或者,半导体衬底,设定制造方法的方法和替代半导体衬底的曝光条件

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a process of manufacturing the same, capable of reducing cost when setting an optimum exposure condition for a semiconductor substrate of low reflectance such as GaN.;SOLUTION: The semiconductor substrate having a reflectance lower than a reflectance of a silicon substrate for light of a specific wavelength includes; a silicon substrate 20; and a dielectric film 10 which is formed on the silicon substrate, and whose refractive index for light of a wavelength of 405 nm is 2.75 or higher and 3.20 or lower. The dielectric film 10 is deposited on the Si substrate 20 by using ECR sputter, for instance.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种半导体衬底及其制造方法,当为诸如GaN的低反射率的半导体衬底设置最佳曝光条件时,能够降低成本;解决方案:反射率低于硅基板对特定波长的光的反射率包括:硅基板20;介电膜10形成在硅基板上,对405nm的波长的光的折射率为2.75以上且3.20以下。通过例如使用ECR溅射将介电膜10沉积在Si基板20上; COPYRIGHT:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP6036439B2

    专利类型

  • 公开/公告日2016-11-30

    原文格式PDF

  • 申请/专利权人 豊田合成株式会社;

    申请/专利号JP20130058433

  • 发明设计人 木村 友;園山 貴広;

    申请日2013-03-21

  • 分类号G03F7/20;G03F9/00;

  • 国家 JP

  • 入库时间 2022-08-21 13:53:02

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