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HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE, AN ABATEMENT SYSTEM, AND VACUUM PROCESSING SYSTEM
HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE, AN ABATEMENT SYSTEM, AND VACUUM PROCESSING SYSTEM
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机译:霍尔效应增强的电容耦合等离子体源,打击系统和真空处理系统
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摘要
Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.
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