首页> 外国专利> HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE, AN ABATEMENT SYSTEM, AND VACUUM PROCESSING SYSTEM

HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE, AN ABATEMENT SYSTEM, AND VACUUM PROCESSING SYSTEM

机译:霍尔效应增强的电容耦合等离子体源,打击系统和真空处理系统

摘要

Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.
机译:本文公开的实施方式包括用于减轻在半导体工艺中产生的化合物的方法。该方法包括:给消融剂通电;通过使被激励的消融剂与离开真空处理室的气体反应来形成组合物;以及使该组合物流过在冷却板上形成的多个孔。通过用冷却板冷却组合物,避免了下游泵的损坏。

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