首页> 外国专利> APPARATUS AND METHOD FOR DEPOSITING HYDROGEN-FREE TA-C LAYERS ON WORKPIECES AND WORKPIECE

APPARATUS AND METHOD FOR DEPOSITING HYDROGEN-FREE TA-C LAYERS ON WORKPIECES AND WORKPIECE

机译:用于在工件和工件上沉积无氢TA-C层的装置和方法

摘要

An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates, which includes a vacuum chamber, which is connectable to an inert gas source and a vacuum pump, a support device in the vacuum chamber, at least one graphite cathode having an associated magnet arrangement forming a magnetron that serves as a source of carbon material, a bias power supply for applying a negative bias voltage to the substrates on the support device, at least one cathode power supply for the cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.
机译:一种用于在基板上制造至少基本上无氢的ta-C层的设备,该设备包括可连接至惰性气体源和真空泵的真空室,真空室内的支撑装置,至少一个石墨阴极具有形成磁控管的相关磁体布置,该磁控管用作碳材料源;用于向支撑装置上的基板施加负偏置电压的偏置电源;用于阴极的至少一个阴极电源,该阴极电源可连接至至少一个石墨阴极并到达相关的阳极,该石墨阴极被设计成发射以一定时间间隔间隔开的高功率脉冲序列,每个高功率脉冲序列包括一系列适于提供的高频直流脉冲,可选地在建造之后提供至至少一个石墨阴极。

著录项

  • 公开/公告号US2017167010A1

    专利类型

  • 公开/公告日2017-06-15

    原文格式PDF

  • 申请/专利权人 HAUZER TECHNO COATING BV;

    申请/专利号US201715443272

  • 申请日2017-02-27

  • 分类号C23C14/06;H01J37/34;C23C14/54;C23C14/34;C23C14/35;

  • 国家 US

  • 入库时间 2022-08-21 13:51:59

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