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Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
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机译:具有硅扩散限定的电流阻挡层的基于GaN的垂直腔表面发射器件的制造方法
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摘要
This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL
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