Indium Tin Oxide Thin Films With Both Near-Infrared Transparency and Excellent Resistivity

摘要

An indium tin oxide film containing by weight about 90% In₂O₃ and about 10% SnO₂ is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 10²⁰/cm³ and a carrier mobility greater than 30 cm²/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.