首页>
外国专利>
METHODS FOR FIN THINNING PROVIDING IMPROVED SCE AND S/D EPI GROWTH
METHODS FOR FIN THINNING PROVIDING IMPROVED SCE AND S/D EPI GROWTH
展开▼
机译:改善提供SCE和S / D EPI增长的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods to reduce a width of a channel region of Si fins and the resulting devices are disclosed. Embodiments include forming a Si fin in a Si layer; forming a channel region over the Si fin including a dummy gate with a spacer on each side; forming S/D regions at opposite ends of the Si fin; removing the dummy gate, forming a cavity; thinning sidewalls of the Si fin; and forming a high-k/metal gate in the cavity.
展开▼