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CMOS-MEMS INTEGRATED DEVICE INCLUDING A CONTACT LAYER AND METHODS OF MANUFACTURE

机译:包括接触层的CMOS-MEMS集成器件及其制造方法

摘要

A method for forming a MEMS device is disclosed. The MEMS device includes a MEMS substrate and a base substrate. The MEMS substrate, where includes a handle layer, a device layer and an insulating layer in between. The method includes the sequential steps of: providing a standoff on the device layer; etching a via through the device layer and the insulating layer; providing a contact layer within the via, wherein the contact layer provides electrical connection between the device layer and the handle layer; providing a bonding layer on the standoff; and bonding the bonding layer to pads on the base substrate.
机译:公开了一种用于形成MEMS器件的方法。 MEMS器件包括MEMS衬底和基础衬底。 MEMS衬底,其中包括处理层,器件层和位于它们之间的绝缘层。该方法包括以下顺序步骤:在设备层上提供隔离;蚀刻穿过器件层和绝缘层的通孔;在通孔内提供接触层,其中接触层提供器件层和处理层之间的电连接;在支座上提供粘结层;然后将结合层结合到基础基板上的焊盘上。

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