CMOS-MEMS INTEGRATED DEVICE INCLUDING MULTIPLE CAVITIES AT DIFFERENT CONTROLLED PRESSURES AND METHODS OF MANUFACTURE

摘要

Integrated MEMS device the linking together and have that there are two shells between them in first substrate and the second substrate that include two substrates. First substrate and the second substrate include degasification source layer and adjust pressure in two shells except barrier layers. This method includes depositing and patterning degasification source layer and the first outlet barrier layer are on substrate, leading to two cross sections. The barrier layer and be encapsulated in the barrier layer of degasification in two section degasification source layers that degasification source layer is not degased on two sections. This method further include deposit with conformally one second degasification barrier etch second deaerate liner barrier layer, so as to this second except barrier layers side wall on leave except gas source bed.