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MULTI-CHIP MICROELECTRONIC ASSEMBLY WITH BUILT-UP FINE-PATTERNED CIRCUIT STRUCTURE

机译:内置精细电路结构的多芯片微电子组件

摘要

A microelectronic assembly includes a dielectric element having bumps projecting from a first surface thereof, the bumps having end surfaces flush with a planarized encapsulation. A circuit structure having a thickness less than or equal to 10 microns, formed by depositing two or more dielectric layers and conductive layers on the respective dielectric layers, has electrically conductive features thereon which electrically contact the bumps. The circuit structure can be formed separately on a carrier and then joined with the bumps on the dielectric element, or the circuit structure can be formed by a build up process on the planarized surface of the encapsulation and the planarized surfaces of the bumps.
机译:微电子组件包括介电元件,该介电元件具有从其第一表面突出的凸块,该凸块的端面与平坦化的封装齐平。通过在相应的介电层上沉积两个或更多个介电层和导电层而形成的厚度小于或等于10微米的电路结构,在其上具有与凸块电接触的导电特征。电路结构可以单独地形成在载体上,然后与介电元件上的凸块接合,或者电路结构可以通过在封装的平坦表面和凸块的平坦表面上的堆积工艺来形成。

著录项

  • 公开/公告号US2017148764A1

    专利类型

  • 公开/公告日2017-05-25

    原文格式PDF

  • 申请/专利权人 INVENSAS CORPORATION;

    申请/专利号US201514951892

  • 申请日2015-11-25

  • 分类号H01L25/065;H01L23;H01L23/31;H01L21/683;H01L21/56;H01L23/498;H01L21/48;H01L25;H01L23/367;

  • 国家 US

  • 入库时间 2022-08-21 13:49:45

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