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LATERAL SUPER JUNCTION DEVICE WITH HIGH SUBSTRATE-GATE BREAKDOWN AND BUILT-IN AVALANCHE CLAMP DIODE

机译:具有高基体门击穿和内置雪崩钳位二极管的横向超级结装置

摘要

A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column through the P-epi to the N+ drain substrate.
机译:横向超结JFET由堆叠的交替的P型和N型半导体层形成在支撑在N +衬底上的P-epi层上。 N +漏极柱向下延伸穿过超结结构和P-epi以连接到N +衬底,从而使该器件成为底部漏极器件。 N +源极列和P +栅极列延伸通过超结,但在P-epi层停止。栅漏雪崩钳位二极管从P +栅列的底部穿过P-epi到N +漏衬底形成。

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