首页>
外国专利>
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
展开▼
机译:栅极到漏极(GD)钳位和ESD保护电路的配置,用于功率器件击穿保护
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor power device supported on a semiconductor substrate comprising a plurality of transistor cells each having a source and a drain with a gate to control an electric current transmitted between the source and the drain. The semiconductor further includes a gate-to-drain (GD) clamp termination connected in series between the gate and the drain further includes a plurality of back-to-back polysilicon diodes connected in series to a silicon diode includes parallel doped columns in the semiconductor substrate wherein the parallel doped columns having a predefined gap. The doped columns further include a U-shaped bend column connect together the ends of parallel doped columns with a deep doped-well that is disposed below and engulfing the U-shaped bend.
展开▼