SEMICONDUCTOR DEVICES HAVING STUD PATTERNS THAT ARE ALIGNED AND MISALIGNED WITH CONTACT PATTERNS

摘要

A semiconductor device includes an active region, a gate pattern on the active region, the active region including a source region at a first side of the gate pattern and a drain region at a second side of the gate pattern, a gate contact pattern on the gate pattern and a drain contact pattern on the drain region, and a gate stud pattern on the gate contact pattern and a drain stud pattern on the drain contact pattern. A distance between a gate contact axis passing through a center portion of the gate contact pattern and a drain contact axis passing through a center portion of the drain contact pattern is different from a distance between a gate stud axis passing through a center portion of the gate stud pattern and a drain stud axis passing through a center portion of the drain stud pattern.