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BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
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机译:具有垂直鳍侧壁轮廓的块状鳍形成
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摘要
A semiconductor device, having a heterogeneous silicon stack, wherein the heterogeneous silicon stack comprises at least a base layer, a doped silicon layer, and an undoped silicon layer. The semiconductor device further includes a plurality of silicon fins atop a doped silicon oxide fin layer and an undoped silicon oxide fin layer, wherein the plurality of silicon fins have a uniform width along the height of the plurality of silicon fins, and wherein the plurality of silicon fins have a plurality of hard mask caps.
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