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Memory with low current consumption and method for reducing current consumption of a memory

机译:具有低电流消耗的存储器以及减少存储器电流消耗的方法

摘要

A method for reducing current consumption of a memory is disclosed, wherein the memory includes a controller and a plurality of banks, and each bank of the plurality of banks includes a plurality of segments. The method includes the controller enabling an activating command corresponding to a first row address and an address of a first bank of the plurality of banks; a word line switch of a segment of the first bank corresponding to the first row address being turned on according to the activating command; the controller enabling an access command corresponding to an address of the segment; a plurality of bit switches corresponding to the segment being turned on according to the access command; and the controller enabling a pre-charge command corresponding to an address of a following segment and the address of the first bank after the access command is disabled.
机译:公开了一种用于减少存储器的电流消耗的方法,其中,所述存储器包括控制器和多个存储体,并且所述多个存储体中的每个存储体包括多个段。该方法包括:控制器启用与第一行地址和多个存储体中的第一存储体的地址相对应的激活命令;以及所述第一存储体的对应于所述第一行地址的段的字线开关根据所述激活命令被导通;所述控制器启用与所述段的地址相对应的访问命令;根据访问命令,导通对应于该段的多个位开关;所述控制器在禁止所述访问命令之后,启用与后续段的地址和所述第一存储体的地址相对应的预充电命令。

著录项

  • 公开/公告号US9773533B2

    专利类型

  • 公开/公告日2017-09-26

    原文格式PDF

  • 申请/专利权人 ETRON TECHNOLOGY INC.;

    申请/专利号US201414297645

  • 发明设计人 CHUN SHIAH;

    申请日2014-06-06

  • 分类号G11C5/14;G11C7/00;G11C8/00;G11C7/12;G11C8/08;G11C11/4091;G11C8/18;G11C7/06;G11C11/4094;G11C11/408;G11C8/12;

  • 国家 US

  • 入库时间 2022-08-21 13:45:51

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