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Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
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机译:具有硅锗(SiGe)功率放大器的单芯片场效应晶体管(FET)开关及其形成方法
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摘要
Various embodiments include field effect transistors (FETs) and methods of forming such FETs. One method includes: forming a first set of openings in a precursor structure having: a silicon substrate having a crystal direction, the silicon substrate substantially abutted by a first oxide; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer; and a sacrificial layer overlying the second oxide, wherein the first set of openings each expose the silicon substrate; undercut etching the silicon substrate in a direction perpendicular to the crystal direction of the silicon substrate to form a trench corresponding with each of the first set of openings; passivating exposed surfaces of at least one of the SiGe layer or the silicon layer in the first set of openings; and at least partially filling each trench with a dielectric.
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