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Plasma dry strip pretreatment to enhance ion implanted resist removal

机译:等离子干法剥离预处理可增强离子注入抗蚀剂的去除

摘要

Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature. The method includes removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature after exposing the substrate to the UV light.
机译:用于处理基板的系统和方法包括将基板暴露于来自具有预定波长范围的UV光源的UV光。衬底包括已经被离子轰击的光致抗蚀剂层。该方法包括在将基板暴露于UV光的同时将基板的温度控制到小于或等于第一温度的温度。该方法包括使用等离子体去除光致抗蚀剂层,同时在将衬底暴露于UV光之后将衬底的温度保持为小于或等于剥离工艺温度。

著录项

  • 公开/公告号US9740104B2

    专利类型

  • 公开/公告日2017-08-22

    原文格式PDF

  • 申请/专利权人 LAM RESEARCH CORPORATION;

    申请/专利号US201414268455

  • 发明设计人 GLEN GILCHRIST;IVAN L. BERRY III;

    申请日2014-05-02

  • 分类号G03F7/36;G03F7/20;H01L21/311;H01L21/67;H01L21/266;

  • 国家 US

  • 入库时间 2022-08-21 13:45:30

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