Optical proximity correction method and method of manufacturing extreme ultraviolet mask by using the optical proximity correction method

摘要

Provided are an optical proximity correction (OPC) method capable of correcting a slit-effect in an extreme ultraviolet (EUV) exposure process and a method of manufacturing an EUV mask by using the OPC method. The OPC method includes, dividing a transmission cross coefficient (TCC) according to regions of a slit that is used in an EUV exposure process, generating OPC models reflecting the TCCs that are divided, and correcting the OPC method.