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Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures
Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures
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机译:具有水平纳米片导电沟道结构的环绕栅场效应晶体管,用于MOL /沟道间间距及相关单元架构
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摘要
A Gate-All-Around (GAA) Field Effect Transistor (FET) can include a horizontal nanosheet conductive channel structure having a width in a horizontal direction in the GAA FET, a height that is perpendicular to the horizontal direction, and a length that extends in the horizontal direction, where the width of the horizontal nanosheet conductive channel structure defines a physical channel width of the GAA FET. First and second source/drain regions can be located at opposing ends of the horizontal nanosheet conductive channel structure and a unitary gate material completely surrounding the horizontal nanosheet conductive channel structure.
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