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Thin film transistor substrate, display device including a thin film transistor substrate, and method of forming a thin film transistor substrate
Thin film transistor substrate, display device including a thin film transistor substrate, and method of forming a thin film transistor substrate
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机译:薄膜晶体管基板,包括该薄膜晶体管基板的显示装置以及形成该薄膜晶体管基板的方法
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摘要
Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.
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