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Pattern wafer for LEDs, epitaxial wafer for LEDs and method of manufacturing the epitaxial wafer for LEDs
Pattern wafer for LEDs, epitaxial wafer for LEDs and method of manufacturing the epitaxial wafer for LEDs
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机译:用于LED的图案晶片,用于LED的外延晶片以及用于LED的外延晶片的制造方法
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摘要
A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle Θ meets 0°Θ≦(180/n)° in which Θ is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding “0”. A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved.
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