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Semiconductor device and method of direct measurement and acquisition of MEMS employing sigma-delta loop

机译:采用sigma-delta回路的直接测量和获取MEMS的半导体器件和方法

摘要

A semiconductor device measures a state of a MEMS as a first voltage variation at a sensing node. The state of the MEMS includes a capacitance. A first capacitor is coupled between the sensing node and an input of an integrator for transferring the first voltage variation to a second node as a first signal. A second voltage variation is routed through a second capacitor to the second node as a second signal. The integrator integrates the first signal and second signal to provide an integrated signal. An ADC has an input coupled to an output of the integrator and converts the integrated signal to a digital signal representative of the capacitance of the MEMS. A DAC has an input coupled to the output of the ADC. A second capacitor is coupled between an output of the DAC and the sensing node.
机译:半导体器件将MEMS的状态测量为感测节点处的第一电压变化。 MEMS的状态包括电容。第一电容器耦合在感测节点与积分器的输入之间,用于将第一电压变化作为第一信号传递至第二节点。第二电压变化通过第二电容器作为第二信号被路由到第二节点。积分器积分第一信号和第二信号以提供积分信号。 ADC具有耦合至积分器的输出的输入,并且将积分的信号转换为表示MEMS的电容的数字信号。 DAC的输入耦合到ADC的输出。第二电容器耦合在DAC的输出与感测节点之间。

著录项

  • 公开/公告号US9574907B2

    专利类型

  • 公开/公告日2017-02-21

    原文格式PDF

  • 申请/专利权人 SEMTECH CORPORATION;

    申请/专利号US201414159926

  • 发明设计人 MICHEL CHEVROULET;OLIVIER NYS;

    申请日2014-01-21

  • 分类号G01D5/24;

  • 国家 US

  • 入库时间 2022-08-21 13:43:57

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