首页> 外国专利> NON-DESTRUCTIVE READOUT FERROELECTRIC MEMORY AS WELL AS METHOD OF PREPARING THE SAME AND METHOD OF OPERATING THE SAME

NON-DESTRUCTIVE READOUT FERROELECTRIC MEMORY AS WELL AS METHOD OF PREPARING THE SAME AND METHOD OF OPERATING THE SAME

机译:非破坏性读取铁电存储器以及其制备方法和操作方法

摘要

A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
机译:公开了一种非破坏性读出铁电存储器,以及制备该铁电存储器的方法和操作该铁电存储器的方法。铁电存储器包括铁电薄膜层。本发明的铁电存储器可以通过电流实现无损读出,适用于高密度应用,制备简单,成本低廉。

著录项

  • 公开/公告号US2016358639A1

    专利类型

  • 公开/公告日2016-12-08

    原文格式PDF

  • 申请/专利权人 FUDAN UNIVERSITY;

    申请/专利号US201514916889

  • 申请日2015-06-26

  • 分类号G11C11/22;H01L27/115;

  • 国家 US

  • 入库时间 2022-08-21 13:43:44

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