Wear leveling method based on timestamps and erase counts, memory storage device and memory control circuit unit

摘要

A wear leveling method for a rewritable non-volatile memory module is provided. The method includes: recording a timestamp for each of physical erasing units storing valid data according to a programming sequence of the physical erasing units storing valid data among the physical erasing units, and recording an erase count for each of physical erasing units. The method also includes: selecting a first physical erasing unit from the physical erasing units storing valid data according to the timestamps, selecting a second physical erasing unit from physical erasing units not storing valid data among the physical erasing units according to the erase counts, and writing valid data of the first physical erasing unit into the second physical erasing unit, and marking the first physical erasing unit as a physical erasing unit not storing valid data.