Nitride based FinFLASH memory device using multilevel Hot Carrier Program/Erase

摘要

In this paper, a FinFLASH memory device is presented using hot carrier program/erase modes. For 2 bits/cell operation, we show that multi-level charge sensing should be preferred over two physical bits/cell storage. While the dual-bit reading scheme limits the later to about 1V operating window, multilevel solution is demonstrated with a total window of 6V. This allows the definition of 4 states of charge with 2V separation and good resistance to read disturb, bake and endurance stress.