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Reducing MEMS stiction by increasing surface roughness

机译:通过增加表面粗糙度来降低MEMS静摩擦

摘要

A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.
机译:提供了一种用于通过减小可紧密接触的两个表面之间的表面积(例如行进停止和行进停止区域)来减小MEMS装置中的静摩擦的机构。通过增加行程停止区域的表面粗糙度来实现接触表面积的减小。这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。进行随后的回蚀以进一步增加粗糙度。多晶硅的沉积和随后的回蚀可以重复一次或多次,以获得所需的粗糙度。然后可以沉积最终的多晶硅层以获得期望的厚度。对该最终多晶硅层构图以形成行进停止区域。较粗糙的表面减小了可用于接触的表面积,继而减小了可通过其施加粘着力的面积。

著录项

  • 公开/公告号US9550664B2

    专利类型

  • 公开/公告日2017-01-24

    原文格式PDF

  • 申请/专利权人 FREESCALE SEMICONDUCTOR INC.;

    申请/专利号US201414574784

  • 发明设计人 ROBERT F. STEIMLE;RUBEN B. MONTEZ;

    申请日2014-12-18

  • 分类号H01L29/84;B81B3/00;

  • 国家 US

  • 入库时间 2022-08-21 13:43:04

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